Atomically precise graphene nanoribbons (GNRs) have shown great potential to further stretch the upcoming scaling limit of integrated circuits technology. GNRs exhibit a sizeable bandgap(1), which is inversely proportional to their width, and are thus excellent candidates for room tem-perature switching applications such as field-effect transistors (FET). Despite their exceptional properties, significant challenges remain for GNR fabrication, processing and characterization. Bottom-up synthesis of graphene nanoribbons is most commonly performed under ultra-high vacuum conditions, which is one of the bottlenecks in the further technological advancement of this material. Additionally, little is known about the stability of ultra-narrow GNRs under ambient conditions or during device processing. In this talk I will address these critical chal-lenges, focusing on GNR fabrication scalability, substrate transfer(2), ex-situ characterization(3), and show that gate and channel length optimization on GNR-FET allows for the fabrication of GNRs devices with high on/off ratios(4)
1: J.Cai et al., Nature, 466, 2010.
2: Fairbrother et al, Nanoscale, 9, 2017
3: Borin Barin et al., ACS Applied Nanomterials, 2, 4, 2019
4: J.P.Llinás et al., Nature Comm, 8. 2017