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Prof. Karsten Horn PhD

Building: D / 1st floor, room 1.06

Tel: 030 / 8413-5640
0172 812 8025
Fax: 030 / 8413-5603

E-mail: horn@fhi-berlin.mpg.de
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Publications

2015 ·
2014 ·
2013 ·
2012 ·
2011 ·
2010 ·
2009 ·
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2016
- Andrew L. Walter, Hasan Sahin, Jun Kang, Ki-Joon Jeon, Aaron Bostwick, Seyda Horzum, Luca Moreschini, Young Jun Chang, Francois M. Peeters, Karsten Horn, Eli Rotenberg: A new family of Graphene-based organic semiconductors: An investigation of photon induced electronic structure manipulation in half-fluorinated graphene. Phys. Rev. B 93, 075439(2016).
2015
- S. K. Mahatha, P. Moras, P. M. Sheverdyaeva, R. Flammini, K. Horn and C. Carbone: Evidence for a diamond-like electronic band structure of Si multilayers on Ag(111). Phys. Rev. B 92, 245127 (2015).
- C. Nicholson, C. Monney, U. Krieg, C. Tegenkamp, H. Pfnuer, K. Horn, M. Wolf: "Electronic structure of self-assembled Ag nanowires on Si(557): spectroscopic evidence for dimensionality", New J. Phys. 17, 093025 (2015).
- F. Bisti, G. Profeta, H. Vita, M. Donarelli, F. Perrozzi, P.M. Sheverdyaeva, P. Moras, K. Horn, L. Ottaviano: "Electronic and geometric structure of graphene/SiC(0001) decoupled by lithium intercalation.", Phys. Rev. B 91, 245411 (2015).
- S. Böttcher, H. Vita, K. Horn: "Photon-induced oxidation of graphene/Ir(111) by SO2 adsorption.", Surf. Sci. 641, 305309 (2015).
- J. Nayak, M. Maniraj, A. Gloskovskii, M. Krajčí, S. Sebastian, I.R. Fisher, K. Horn, and S.R. Barman: "Bulk electronic structure of Zn-Mg-Y and Zn-Mg-Dy icosahedral quasicrystals", Phys. Rev. B 91, 235116 (2015).
- V. Palermo, A. La Magna, A. Helman, R. Hurt, K. Horn, and S.R. Barman: "Announcement of a special virtual issue on the EuroGRAPHENE program", Carbon 85, 450451 (2015).
2014
- A.L. Walter, H. Sahin, K.-J. Jeon, A. Bostwick, S. Horzum, R. Koch, F. Speck, M. Ostler, P. Nagel, M. Merz, S. Schupler, L. Moreschini, Y.J. Chang, T. Seyller, F.M. Peeters, K. Horn, E. Rotenberg: "Luminescence, Patterned Metallic Regions, and Photon-Mediated Electronic Changes in Single-Sided Fluorinated Graphene Sheets", ACS Nano 8, 78017808 (2014).
- J. Martínez-Blanco, B. Walter, A. Mascaraque, K. Horn: "Long-Range Order in an Organic Overlayer Induced by Surface Reconstruction: Coronene on Ge(111)", J. Phys. Chem. C 118, 1169911703 (2014).
- M. Maniraj, A. Rai, S.R. Barman, M. Krajčí, D.L. Schlagel, T.A. Lograsso, K. Horn: "Unoccupied electronic states of icosahedral Al-Pd-Mn quasicrystals: Evidence of image potential resonance and pseudogap", Phys. Rev. B 90, 115407 (2014).
- H. Vita, S. Böttcher, P. Leicht, K. Horn, A. B. Shick, and F. Máca: "Electronic structure and magnetic properties of cobalt intercalated in graphene on Ir(111)", Phys. Rev. B 90, 165432 (2014).
- H. Vita, S. Böttcher, K. Horn, E. N. Voloshina, R. E. Ovcharenko, Th. Kampen, A. Thissen & Yu. S. Dedkov: "Understanding the origin of band gap formation in graphene on metals: graphene on Cu/Ir(111)", Scientific Reports 4, 5704 (2014).
- Ostler, M., F. Fromm, R.J. Koch, P. Wehrfritz, F. Speck, H. Vita, S. Böttcher, K. Horn, & T. Seyller: "Buffer layer free graphene on SiC(0001) via interface oxidation in water vapor", Carbon, 70, 258-265 (2014).
- S. Böttcher, H. Vita, K. Horn: "Reversible photon-induced oxidation of graphene by NO2 adsorption", Surf. Sci. 621, 117122 (2014).
2013
- A.L. Walter, A. Bostwick, F. Speck, M. Ostler, Y. S. Kim, Y. J. Chang, L. Moreschini, D. Innocenti, Th. Seyller, K. Horn, and E. Rotenberg: "Small scale rotational disorder observed in epitaxial graphene on SiC(0001)", New J. Phys. 15, 023019 (2013).
- Y.J. Chang, L. Moreschini, A. Bostwick, G.A. Gaines, Y.S. Kim, A.L. Walter, B. Freelon, A. Tebano, K. Horn, and E. Rotenberg: "Electronic Instability in a Zero-Gap Semiconductor: The Charge-Density Wave in (TaSe4)2I", Phys. Rev. Lett. 111, 126401 (2013).
2012
- Nayak, J., M. Maniraj, A. Rai, S. Singh, P. Rajput, A. Gloskovskii, J. Zegenhagen, D.L. Schlagel, T.A. Lograsso, K. Horn, and S.R. Barman,
Bulk Electronic Structure of Quasicrystals, Phys. Rev. Lett. 109, 216403 (2012).
- Yu. S. Dedkov, K. Horn, A. Preobrajenski, and M. Fonin,
"Epitaxial Graphene on Metals". In: H. Raza (ed.), , pp. 189234. Springer, Berlin (2012), ISBN: 978-3-642-22984-8
- J. Martínez-Blanco, A. Mascaraque, Yu. S. Dedkov, K. Horn,
Ge(001) As a Template for Long-Range Assembly of π-Stacked Coronene Rows, Langmuir, 28, 38403844 (2012)
- M. Sicot, Ph. Leicht, A. Zusan, S. Bouvron, O. Zander, M. Weser, Yu. S. Dedkov, K. Horn and M. Fonin,
Size-Selected Epitaxial Nanoislands Underneath Graphene Moiré on Rh(111), ACS Nano, 6, 151158 (2012)
- A.L. Walter, A. Bostwick, K.-J. Jeon, F. Speck, M. Ostler, Th. Seyller, L. Moreschini, Y. S. Kim, Y. J. Chang, M. Polini, R. Asgari, A. H. MacDonald, K. Horn, and E. Rotenberg: "Effective screening and the plasmaron bands in graphene", Phys. Rev. B 84, 085410 (2012).
- I. Crassee, M. Orlita, M. Potemski, A.L. Walter, M. Ostler, Th. Seyller, I. Gaponenko, J. Chen, A.B. Kuzmenko: "Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene", Nano Lett., 12, 2470 (2012).
2011
- M. Weser, E. N. Voloshina, K. Horn, and Yu. S. Dedkov, Electronic structure and magnetic properties of the graphene/Fe/Ni(111) intercalation-like system, Phys. Chem. Chem. Phys. 13, 7534 (2011).
- S. Böttcher, M. Weser, Yu. S. Dedkov, K. Horn, E. N. Voloshina, and B. Paulus, Graphene on ferromagnetic surfaces and its functionalization with water and ammonia, Nanoscale Res. Lett. 6, 214 (2011).
- A. L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, Th. Seyller, L. Moreschini, Y. S. Kim, Y. J. Chang, K. Horn, and E. Rotenberg, "Highly p-doped epitaxial graphene obtained by fluorine intercalation", Applied Physics Letters 98, 184201 (2011).
- Yu. S. Dedkov, K. Horn, A. Preobrajenski, and M. Fonin: "Epitaxial Graphene on Metals", Book chapter, in Graphene Nanoelectronics, Springer, Berlin (2011) - ISBN 978-3-642-20467-8.
- E. N.Voloshina, A. Generalov, M. Weser, S. Böttcher, K. Horn and Yu. S. Dedkov: "Structural and electronic properties of the graphene/Al/Ni(111) intercalation system", New J. Phys. 13, 113028 (2011).
- A. L. Walter, K.-J. Jeon, A. Bostwick, F. Speck, M. Ostler, Th. Seyller, L. Moreschini, Y. S. Kim, Y. J. Chang, K. Horn, and E. Rotenberg: "Highly p-doped epitaxial graphene obtained by fluorine intercalation", Appl. Phys. Lett. 98, 184102 (2011).
- A. L. Walter, S. Nie, A. Bostwick, K. S. Kim, L. Moreschini, Y. J. Chang, D. Innocenti, K. Horn, K. F. McCarty, and E. Rotenberg: "Electronic structure of graphene on single-crystal copper substrates", Phys. Rev. B 84, 195443 (2011).
2010
- M. Weser, Y. Rehder, K. Horn, M. Sicot, M. Fonin, A. B. Preobrajenski, E. N. Voloshina, E. Goering, and Yu. S. Dedkov, Induced magnetism of carbon atoms at the graphene/Ni(111) interface, Appl. Phys. Lett. 96, 012504 (2010).
- J. L. McChesney, A Bostwick, T. Ohta, Th. Seyller, K. Horn, J. González, and Eli Rotenberg Extended van Hove Singularity and Superconducting Instability in Doped Graphene. Physical Review Letters 104, 136803(2010).
- C. Enderlein, Y. S. Kim, A. Bostwick, E. Rotenberg, and K. Horn, The formation of an energy gap in graphene on ruthenium by controlling the interface, New J. Phys. 12, 033014 (2010).
- J. H. Dil, B. Huelsen, T. U. Kampen, P. Kratzer, and K. Horn, Influence of the substrate lattice structure on the formation of quantum well states in thin In and Pb films on silicon, J. Phys.: Condens. Matter 22, 135008 (2010).
- J. L. McChesney, A. Bostwick, T. Ohta, Th. Seyller, K. Horn, J. Gonzalez, and E. Rotenberg, Extended van Hove singularity and superconducting instability in doped graphene, Phys. Rev. Lett. 104, 136803 (2010).
- J. Martinez-Blanco, M. Klingsporn, and K. Horn, Selective adsorption of coronene on Si(111)-(7 x 7) , Surf. Sci. 604, 523 (2010).
- A. Bostwick, F. Speck, Th. Seyller, K. Horn, M. Polini, R. Asgari, A. H. MacDonald, Eli Rotenberg, Observation of plasmarons in quasi-freestanding doped graphene, Science 328, 999 (2010).
- Y. J. Chang, A. Bostwick, Y. S. Kim, K. Horn, and E. Rotenberg, Structure and correlation effects in semiconducting SrTiO3, Phys. Rev. B 81, 235109 (2010).
- A. Bostwick, T. Ohta, J. L. McChesney, K. V. Emtsev, F. Speck, Th. Seyller, K. Horn, S. D. Kevan, and E. Rotenberg, The interaction of quasi-particles in graphene with chemical dopants, New J. Phys. 12, 125014 (2010).
- Y. J. Chang, A. Bostwick, Y. S. Kim, K. Horn, and E. Rotenberg, "Structure and correlation effects in semiconducting SrTiO3", Phys. Rev. B 81, 235109 (2010).
2009
- K. V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L. McChesney, T. Ohta, S. A. Reshanov, J. RËhrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and Th. Seyller, Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nature Materials 8, 203 (2009).
- A. K. Shukla, R. S. Dhaka, S. W. DSouza, Sanjay Singh, D. Wu, T. A. Lograsso, M. Krajčí, J. Hafner, K. Horn, and S. R. Barman, Quasiperiodic layers of free-electron metals studied using electron diffraction, Phys. Rev. B 79, 134206 (2009).
- T. Filleter, J. L. McChesney, A. Bostwick, E. Rotenberg, K. V. Emtsev, Th. Seyller, K. Horn, and R. Bennewitz, Friction and dissipation in epitaxial graphene films, Phys. Rev. Lett. 102, 086102 (2009).
2008
- Thomas Seyller, Aaron Bostwick, Konstantin V. Emtsev, Karsten Horn, Lothar Ley, Jessica L. McChesney, Taisuke Ohta, John D. Riley, Eli Rotenberg, and F. Speck, Epitaxial graphene: A new material, Phys. Stat. Sol. (b) 245, 1436 (2008).
- M. Moreno, A. Kumar, M. Tallarida, A. Ney, K. H. Ploog, K. Horn, Electronic signature of MnAs phases in bare and buried films grown on GaAs(001), J. Vac. Sci. Technol. B 26, 1530 (2008).
- Eli Rotenberg, Aaron Bostwick, Taisuke Ohta, Jessica L. McChesney, Thomas Seyller, and Karsten Horn, Origin of the energy bandgap in epitaxial graphene, Nature Materials 7, 258(2008) (comment).
- C. Tegenkamp, T. Ohta, J. L. McChesney, H. Dil, E. Rotenberg, H. Pfnür, and K. Horn, Coupled Pb chains on Si(557): Origin of one-dimensional conductance, Phys. Rev. Lett. 100, 076802 (2008).
- M. Moreno, A. Kumar, M. Tallarida, K. Horn, A. Ney, K. H. Ploog, Electronic states in arsenic-decapped MnAs (1100) films grown on GaAs(001): A photoemission spectroscopy study, Appl. Phys. Lett. 92, 084103 (2008).
2007
- Taisuke Ohta, Farid El Gabaly, Aaron Bostwick, Jessica L. McChesney, Konstantin V. Emtsev, Andreas K. Schmid, Thomas Seyller, Karsten Horn, Eli Rotenberg, Morphology of graphene thin film growth on SiC(0001), New J. Phys. 10, 023034 (2007).
- A.Bostwick, T.Ohta, J.L.McChesney, Th.Seyller, K.Horn, E.Rotenberg, Band structure and many body effects in graphene, European Physical Journal Special Topics 148, 5 (2007).
- V.W. Brar, Y. Zhang, Y.Yayon, A. Bostwick, T. Ohta, J. L. McChesney, K.Horn, E. Rotenberg, M. F. Crommie, Scanning tunneling spectroscopy of the inhomogeneous electronic structure in monolayer and bilayer graphene on SiC, Appl. Phys. Lett. 91, 122102 (2007).
- A. Bostwick, T. Ohta, J. L. McChesney, Konstantin V. Emtsev, Thomas Seyller, Karsten Horn, Eli Rotenberg, Symmetry Breaking in Few Layer Graphene Films, New Journal of Physics 9, 385(2007).
- M.N.Piancastelli, Z.Bao, F.Hennies, O.Travnikova, D.Céolin, Th.Kampen, and K.Horn Electronic and geometric structure of methyl oxirane adsorbed on Si(100) 2 x 1, Appl. Surf. Sci. 254, 108 (2007).
- T.U.Kampen, J.W.Kim, Ph.M.Schmidt, J.H.Dil, and K.Horn, Circular Dichroism of adsorbed chiral molecules, J. El. Spec. Relat.Phenom. 156, (2007).
- P.S. Kirchmann, M. Wolf, J.H. Dil, K. Horn, U. Bovensiepen, Quantum size effects in Pb/Si(111) investigated by laser-induced photoemission, Phys. Rev. B 76, 075406 (2007).
- M. Ruiz-Oses, T. Kampen, N. Gonzalez-Lakunza, I. Silanes, P. M. Schmidt, A. Gourdon, A. Arnau, K. Horn, and J. E. Ortega, Spectroscopic fingerprints of amine and imide functional groups in supramolecular monolayers, Chem. Phys. Chem 8, 1722 (2007).
- Aaron Bostwick, Taisuke Ohta, Jessica L. McChesney, Thomas Seyller, Karsten Horn, Eli Rotenberg, Renormalization of graphene bands by many-body interactions, Solid State Commun. 143, 63 (2007).
- A. Bostwick, K.V. Emtsev, K. Horn, E. Huwald, L. Ley, J.L.McChesney, T. Ohta, J.Riley, E. Rotenberg, F. Speck, and Th. Seyller, Photoemission studies of graphene on SiC: growth, interface, and electronic structure, Appl. Phys. A, in press
- Ph.Schmidt, T.U.Kampen, J.H.Dil, and K.Horn, Conformaional Isomers of Stilbene on Si(100), Surf. Sci. 601, 1775 (2007).
- M. Cranney, G. Comtet, G. Dujardin,, J.W. Kim, T. Kampen, K. Horn, M. Mamatkulov, L. Stauffer and Ph. Sonnet, Electronic structure of biphenyl on Si(100), Phys. Rev. B 76, 075324 (2007).
- A. K. Shukla, P. Krüger, R. S. Dhaka, D. I. Sayago, K. Horn, and S. R. Barman, Understanding the 2p core-level spectra of manganese: Photoelectron spectroscopy experiments and Anderson impurity model calculations, Phys. Rev. B 75, 235419 (2007).
- Taisuke Ohta, Aaron Bostwick, Thomas Seyller, J.L.McChesney, Karsten Horn, and Eli Rotenberg, Interlayer interaction and electron screening in multilayer graphene, Phys. Rev. Lett. 98, 206802 (2007).
- J.I. Pascual, C. Corriol, G. Ceballos, H.-P. Rust, K. Horn, J. M. Pitarke, P. M. Echenique and A. Arnau, Role of electric field in surface electron dynamics above the vacuum level, Phys. Rev. B 75, 165326 (2007).
- Aaron Bostwick, Taisuke Ohta, Thomas Seyller, Karsten Horn, and Eli Rotenberg, Quasiparticle dynamics in graphene, Nature Phys. 3, 36 (2007).
- J.W.Kim, T.U.Kampen, K.Horn, M.-C.Jung, Thermal decomposition of ehtylene on Si(111): formation of the Si(111)√3 x √3 carbon structure, Surf. Sci. 601, 694 (2007).
2006
- T.Ohta, A.Bostwick, Th. Seyller, K.Horn, E.Rotenberg, Controlling the Electronic Structure of Bilayer Graphene, Science 313, 951-954 (2006)
- P. Moras, W. Theis, L. Ferrari, S. Gardonio, J. Fujii, K. Horn, and C. Carbone, Quasicrystalline electronic states of a one-dimensionally modulated Ag film, Phys. Rev. Lett. 96,156401 (2006)
- A.K.Shukla, R.S.Dhaka,C.Biswas,S.Banik,S.R.Barman,K. Horn, Ph.Ebert,K.Urban, Growth and electronic structures of alkali metal adlayers on icosahedral Al70.5Pd21Mn8.5, Phys. Rev. B 73, 054432 (2006)
- J. I. Pascual, A. Dick, M. Hansmann, H.-P. Rust, J.Neugebauer, and K. Horn, Bulk electronic structure of metals resolved with scanning tunneling microscopy, Phys. Rev. Lett. 96, 046801 (2006).
- K. Horn, W.Theis, J.J.Paggel, S.R. Barman,E. Rotenberg, Ph. Ebert and K. Urban, Core and valence level photoemission and photoabsorption study of icosahedral Al-Pd-Mn quasicrystals, J.Phys. Condens.Matter 18,435 (2006)
- J.H. Dil, J.W. Kim, Th. Kampen, K. Horn, A.R.H.F. Ettema, Electron localisation in metallic quantum wells: Pb versus In on Si(111), Phys. Rev. B (Rapid Comm.) B73, 161308 (2006).
2005
- J. W. Kim, M. Carbone, J. H. Dil, M. Tallarida, R. Flammini, M. P. Casaletto, K. Horn, and M. N. Piancastelli, Atom-specific identification of adsorbed chiral molecules by photoemission, Phys. Rev. Lett. 95, 107601 (2005).
- J.H. Dil, J.W. Kim, Th. Kampen, K. Horn, A.R.H.F. Ettema, Electron localisation in metallic quantum wells: Pb versus In on Si(111), Phys. Rev. B (Rapid Comm.) B73, 161308 (2006).
- M.P.Casaletto, M.Carbone, M.N.Piancastelli, K.Horn, K.Weiss, and R.Zanoni, A high resolution photoemission study of phenol adsorption on Si(100), Surface Science 582, 42 (2005).
2004
- J. I. Pascual, G. Bihlmayer, Yu.M. Koroteev, H.-P. Rust, G. Ceballos, M. Hansmann, K. Horn, E.V. Chulkov, S. Blügel, P.M. Echenique, and Ph. Hofmann, Role of spin in quasiparticle interference,Phys. Rev. Lett. 93, 196802(2004).
- K.Horn, Charging atoms one by one, Science 305, 483(2004) (Perspective Comment).
- J.H. Dil, J.W. Kim, S. Gokhale, M. Tallarida and K. Horn, Self-organization of Pb thin films on Cu(111) induced by quantum size effects: An angle-resolved photoemission study, Phys. Rev. B 70, 045405(2004).
- J.W.Kim, M.Carbone, M.Tallarida, J.H.Dil, M.P.Casaletto, R.Flamini, and M.N.Piancastelli, Adsorption of 2,3 butanediol on Si(100), Surface Science 559, 179(2004).
- S.R.Barman, C.Biswas, and K.Horn, Collective excitations on silver surfaces studied by photoyield spectroscopy, Surface Science 566-568,538(2004).
- U.Starke, M.Tallarida, A.Kumar, K.Horn, L.Seifahrt, und L.Kipp, Reconstruction of cleaved 6H-SiC surfaces, Silicon Carbide and Related Materials 2003, Mat.Sci. Forum 457-460, 391(2004).
- A.Kumar, M.Tallarida, M.Hansmann U.Starke, K.Horn, Thin manganese films on Si(111)-(7 x 7): electronic structure and strain in silicide formation, J. Phys. D: Appl. Phys. 37,1083 (2004).
- S.R.Barman, C.Biswas, and K.Horn, Electronic excitations on silver surfaces, Phys. Rev. B 69, 045413 (2004).
- Jin-Cheng Zheng, C.H.A. Huan, and A.T.S. Wee, M.A. Van Hove, C.S. Fadley, F.J. Shi, E. Rotenberg, S.R. Barman, J.J. Paggel, K. Horn, Ph. Ebert and K. Urban, Atomic Scale Structure of the 5-fold Surface of an AlPdMn Quasicrystal: a Quantitative X-Ray Photoelectron Diffraction Analysis, Phys. Rev. B 69, 134107 (2004).
- J.J.Paggel, Ch.Weindel, K.Horn, W.Mannstadt, D.Fick, Influence of bulk doping type on Li adsorption on Si(111)-(7 x 7), Phys. Rev. B 69, 035310(2004).
2003
- M. Hansmann, J. I. Pascual, G. Ceballos, H.-P. Rust, K. Horn, Scanning tunneling spectroscopy study of Cu(554): Confinement and dimensionality at a stepped surface Phys. Rev. B 67 , 121409 (2003).
- Ph.Ebert, M.Yurechko, F.Kluge, K.Horn, K.Urban, Cleavage surfaces of quasicrystals in Quasicrystals, Structure and Physical Properties, ed. H.-R. Trebin, Wiley-VCH, Weinheim, 2003, p. 572-597.
- W.Theis, E.Rotenberg, K.Franke, K.Horn, Electronic structure in quasicrystals and approximants in Quasicrystals, Structure and Physical Properties, ed. H.-R. Trebin, Wiley-VCH, Weinheim, 2003,p.615-621.
- L.Aballe, C.Rogero, K.Horn, Quantum-size effects in ultrathin Mg films:electronicstructure and collective excitations, Surface Science 518 (2002)141.
- J.Schaefer, S.C.Erwin, M.Hansmann, Z.Song, E.Rotenberg, S.D.Kevan, C.S.Hellberg, und K.Horn, Random Registry shifts in Quasi-one-dimensional Adsorbate Systems, Phys. Rev. B 67, 085411(2003).
- W.Theis, E.Rotenberg, K.J.Franke, P.Gille, K.Horn, Electronic valence bands in decagonal AlNiCo, Phys. Rev.B 68, 104205 (2003).
2002
- K.Horn, M.Moreno, M.Alonso, M.Höricke, R.Hey, J.L.Sacedon, K.H.Ploog,Photoemission from Heterojunctions with intralayers: band offset changes vs. Band bending effects Vacuum 67, 115(2002).
- E.Rotenberg, W.Theis, K.Horn,Model simulations of momentum-resolved photoemission from quasicrystals Proceedings of the Quasicrystal 2001 Conference, Sendai, Japan 2002, J.Alloys.Comp. 342, 348(2002).
- L.Aballe, C.Rogero, und K.Horn,Quantum well states in ultrathin epitaxial Mg films on Si(111) Phys. Rev. B 65, 125319 (2002).
- F.J.Palomares, M.Serrano, A.Ruiz, F.Soria, K.Horn, and M.Alonso,ARPES study of the surface states from Au/Ag(111): evolution with coverage and photon energy Surface Science 513,283-294(2002).
- M.P.Casaletto, R.Zanoni, M.Carbone, M.N.Piancastelli, K.Weiss, L.Aballe, und K.Horn,Methanol adsorption on Si(100)-(2 x 1) investigated by high resolution photoemission Surface Science 505, 251-259(2002).
- K.Horn, M.Moreno, M.Alonso, M.Höricke, R.Hey, J.L.Sacedon, K.H.Ploog, Photoemission from Heterojunctions with intralayers: band offset changes vs. Band bending effects Vacuum 67, 115(2002).
2001
- Z.Song, J.I.Pascual, H.Conrad, K.Horn, and H.-P.Rust, Surface states of d character imaged by scanning tunneling microscop, Surface Science 491, 39(2001).
- M.P.Casaletto, R.Zanoni, M.Carbone, M.N.Piancastelli, K.Weiss, K.HornEthylene adsorption on Si(100)-(2 x 1): a high resolution photoemission study, Phys. Rev B 62, 17128 (2000).
- L.Aballe, C.Rogero, P.Kratzer, S.Gokhale, and K.Horn, Probing interface electronic structure with overlayer quantum well resonances:Al/Si(111, Phys. Rev. Lett. 87, 156801(2001).
- Ph.Ebert, P.Quadbeck, K.Urban, B.Henninger, K.Horn, G.Schwarz, J.Neugebauer, und M.Scheffler, Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors, Appl. Phys. Lett. 79, 2877 (2001).
- L. Aballe, C. Rogero, S. Gokhale, S. Kulkarni und K. Horn, Quantum-well states in ultrathin aluminium films on Si(111), Surface Science, 482 - 485, 488(2001).
- J.I.Pascual, Z.Song, J.Jackiw, K.Horn, und H.-P.Rust, Visualization of surface electronic structure: dispersion of surface states of Ag(110), Phys. Rev. B (Rapid Comm.) 63, 241103 (2001).
- P.Häberle, W.Ibañez, S.R.Barman, Y.Q.Cai, und K.Horn, Photoexcited modes in thin alkali layers adsorbed on Al, Nucl. Instr. Methods B182, 102(2001).
- Z.Song, J.I.Pascual, H.Conrad, K.Horn, und H.-P.Rust, Imaging Surface electronic Structure of NiAl(110) using low temperature scanning tunnelling microscopy, Appl. Phys. A72, S159 (2001).
- D.A.Evans, H.J. Steiner R. Middleton, T.S. Jones,C. H. Chen, K. Horn, S. Park, Th. Kampen, D. Tenne, D.R.T. Zahn, A. Patchett, I. T. McGovern, In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam deposition, Appl. Surf. Sci, 175-176, 374 (2001).
- S.R.Barman, P.Häberle, W.Ibañez, Y.Q.Cai, und K.Horn,Collective excitations in alkali metal films on Al, Phys. Rev. B 64, 195410 (2001).
- S.R.Barman, P.Häberle, K.Horn, J.Maytorena, und A.Liebsch, Quantum well behavior without confining barrier observed via dynamically screened photon field, Phys. Rev. Lett. 86, 5108 (2001).
2000
- E.Rotenberg, W.Theis, K.Horn, and P.Gille, "Quasicrystalline valence bands in decagonal AlNiCo" Nature 406, 602 (2000).
- M. Moreno, M. Alonso, M. Höricke, R. Hey, K. Horn, J.L. Sacedón, und K.Horn, "Photoemission results on intralayer insertion at III-V/III-V junctions: A critical appraisal of the different interpretations", J. Vac. Sci. Technol. B 14, 2128 (2000).
- Ph.Ebert, K.Urban, L.Aballe, C.H.Chen, K.Horn, G.Schwarz, J.Neugebauer, und M.Scheffler,"Symmetric versus non-symmetric structure of the phosphorus vacancy on InP(110)", Phys. Rev. Lett., 84, 5816 (2000).
- K.Horn, "Photoemission studies of barrier heights in metal-semiconductor interfaces and heterojunctions", Appl. Surf. Sci. 166,1 (2000).
- K.Horn, "Electronic structure of semiconductor surfaces", in "Handbook of Surface Science" Vol. II, ed. K.Horn and M.Scheffler, Elsevier Amsterdam 2000.
- M. Moreno, M. Alonso, J.L. Sacedón, M. Höricke, R. Hey, K. Horn, K.H. Ploog "Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements" Phys. Rev. B 61,16060 (2000).
- D.Wolfframm, D.A.Evans, G.Neuhold, und K.Horn, "Gold and Silver contacts on ZnS(110)",J. Appl. Physics 87, 3905 (2000).
199990
- K.Horn und S.R.Barman Photoemission study of electronic excitations at clean metal surfaces and thin films Appl. Physics A 69, 519(1999).
- P.Baumgärtel, J.J.Paggel, M.Hasselblatt, K.Horn, V.Fernandez, O.Schaff, J.H.Weaver, A.M.Bradshaw, D.P.Woodruff, E.Rotenberg, und J.Denlinger Structure determination of the (√3 x √3)R30° boron phase on the Si(111) phase using photoelectron diffraction Phys. Rev. B 59, 13 014(1999).
- M.Carbone, M.N.Piancastelli, J.J.Paggel, Chr.Weindel, und K.Horn A high resolution photoemission study of ethanol adsorption on Si(111)-(7 x 7) Surface Science 412/413, 441(1998).
- S.R.Barman,C.Stampfl, P.Häberle, und K.Horn Dependence of collective excitations on surface electron density Phys. Rev. B 61,12721 (2000).
- S.R.Barman, P.Häberle, und K.Horn Collective and single particle excitations in the photoyield spectrum of Al Phys. Rev. B. (Rapid Comm.) 58, R4285(1998)
- M.Moreno, J.L. Sacedón, , M. Alonso, , M. Höricke R. Hey, J. Avila,C.Asensio, K. Horn und K. Ploog Si and Be intralayers at GaAs/AlAs heterojunctions: Doping effect Phys.Rev. B 58, 13767 (1998).
- S.R.Barman, S.-A.Ding, G.Neuhold, K.Horn, D.Wolfframm und D.A.Evans Electronic structure of Zincblende Phys.Rev. B 58, 7053 (1998).
- M.Moreno, H.Yang, M.Höricke, M.Alonso, J.A.Martin-Gago, R.Hey, K.Horn, J.L.Sacedon, und K.Ploog Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: polar vs. nonpolar interfaces Phys.Rev. B 57, 12314(1998).
- K.O.Magnusson, G.Neuhold, D.A.Evans, und K.Horn Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence level states Phys.Rev. B 57, 8945 (1998).
- S.R.Barman, P.Häberle, K.Horn, H.Ishida und A.Liebsch Photo-induced plasmon excitations in alkali metal overlayers Phys. Rev. B 57, 6662(1998).
- G.Neuhold, S.R.Barman, K.Horn, Ph.Ebert, und K.Urban Enhanced Surface Density of States in Icosahedral Quasicrystals Physical Review B 58, 734(1998).
- Th.Chasse, D.A.Evans, und K.Horn Growth Mode, Morphology, Schottky Barrier Formation, and Surface Photovoltage Effects in Sn Layers on GaP(110) Appl. Surf. Sci. 115, 326(1997).
- K.Horn Photoelectron spectroscopy of Semiconductor Surfaces and Interfaces Poverkhnost (Moskau) 4-5, 77(1997).
- M.N.Piancastelli, J.J.Paggel, M.Hasselblatt, Ch. Weindel, und K.Horn Quenching of Surface States of Si(111)-(7 x 7) by methanol adsorption: assignment of adsorbate binding sites Phys.Rev. B(Rapid Comm.) 58, 12737(1997).
- J.J.Paggel, G.Neuhold, H.Haak, und K.Horn Morphology and electronic structure of thin Na films on Si(111)-(7 x 7) and Si(111)- (1 x 1):Na Surface Science 414, 221(1998).
- G. Neuhold und K.Horn Depopulation of the Ag(111) surface state by strain in epitaxial films Physical Review Letters 78, 1327(1997).
- S.-A.Ding, S.R.Barman, K.Horn, H.Yang, B.Yang, O.Brandt, und K.Ploog Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron radiation photoemission spectroscopy Applied Physics Letters 70, 2407(1997).
- S.-A.Ding, S.R.Barman, V.L.Alperovich, K.Horn Electronic structure of wurtzite GaN(0001) Proceedings of the 23rd Int'l Conference on the Physics of Semiconductors, ed. M. Scheffler und R. Zimmermann (World Scientific, Singapore 1996), p. 525.
- V.L.Alperovich, S.A.Ding, S.R.Barman, G.Neuhold, Th.Chassé, und K.Horn Evidence of Mott-Hubbard and bipolaronic behaviour in photoemission spectra of alkali metal/GaAs(110) interfaces Proceedings of the 23rd Int'l Conference on the Physics of Semiconductors, ed. M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996), p. 923.
- G.Neuhold, L.Bartels, J.J.Paggel, und K.Horn Morphology of thin Ag films on GaAs(110): a LEED and STM study Surface Sci. 376, 1 (1997).
- S.-A.Ding G.Neuhold, J.H.Weaver, P.Häberle, K.Horn, O.Brandt, H.Yang, K.Ploog Electronic structure of cubic gallium nitride films grown on GaAs J.Vac.Sci.Technol A 14, 819 (1996).
- D.Wolfframm, P.Bailey, D.A.Evans, G.Neuhold und K.Horn Zinc Sulfide on GaP(110): characterization of epitaxial growth and electronic structure J.Vac.Sci.Technol.A 14, 844(1996).
- S.Schömann, K. Schmidt, H. Peisert, T. Chassé, und K. Horn Electronic and surfactant effects of As interlayers at Ag/InP(110) interfaces Surface Science 352-354, 855(1996).
- G.Neuhold, Th.Chassé, J.J.Paggel, und K.Horn Observation of Cs-induced states in the band gap of GaP(110): Alkali metal bonding and Fermi level pinning, Phys.Rev.B 54, 8623 (1996).
- R.Cimino, A.Giarante, K.Horn, und M.Pedio Effects of barrier height inhomogeneity on semiconductor core level photoemission line shape J.Elec.Spec. 76, 477(1995).
- J.J.Paggel, W.Theis, und K.Horn Si 2p core level spectroscopy: Si(111)-(7 x 7) and Si(111) -"1 x 1" J.Elec.Spec., eingereicht.
- D. Drews, A.Schneider, K.Horn, und D.R.T.Zahn Raman monitoring of ternary compound formation: ZnSxSe1-x on GaAs(100) J. Crystal Growth 159, 152(1996).
- J.J.Paggel, G.Neuhold, H.Haak, und K.Horn Scanning tunneling microscopy and photoemission study of an alkali-metal induced structural phase transition: Si(111)-(7x7) -> Si(111)-Na(3x1) Phys.Rev. B 52, 5813 (1995).
- Th.Chassé, G.Neuhold, J.J.Paggel, K.Horn Evidence for surface derelaxation induced by metals on III-V compound semiconductors: Cs/InP(110) Surface Science 331-333, 528(1995).
- R.Cimino, A.Giarante, K.Horn, und M.Pedio Effects of barrier height inhomogeneity on semiconductor core level photoemission line shape Europhys.Lett. 32, 601 (1995).
- Th.Chassé, G.Neuhold, K.Horn Investigation of the As/InP(110) interface by high resolution photoemission Surface Science 331-333, 511(1995).
- G.Neuhold, K.Horn, K.O.Magnusson, D.A.Evans Zincblende-CdSe on GaSb(110): Characterization of epitaxial growth and electronic structure J.Vac.Sci.Technol. A 13, 666(1995).
- R.Cimino, A.Giarante, K.Horn, und M.Pedio Line broadening in semiconductor core level photoemission induced by barrier height inhomogeneity Surface Science 331-333, 534(1995).
- P. Link, G.Grobbel, M.Wörz, S.Bauer, H.Berger, W.Gebhardt, J.J.Paggel und K.Horn Photoelectron Spectroscopy from Atomic Layers Epitaxy Grown ZnTe/ZnSe Heterostructures J.Vac.Sci.Technol, A 13, 11(1995).
- W. Theis und K.Horn Surface Melting in Al(110) Observed in Core Level Photoemission Phys.Rev.B51, 7157(1995).
- H. Öfner, J.Kraft, R.Hofmann, S.L.Surnev, F.P.Netzer, J.J.Paggel, K.Horn Electronic Structure and morphology of In-oxide-Si(111) structures Surface Science 316, 112(1994).
- H.Öfner, R.Hofmann, J.Kraft, F.P.Netzer, J.J.Paggel und K.Horn Metal overlayer-induced charge transfer effects in thin SiO2-Si structures Phys.Rev. B 50, 15 120(1994).
- J.J.Paggel, W.Theis, K.Horn, C.Hellwig, Ch.Jung, und H.Petersen Correlation of surface core levels and structural building blocks through high resolution core level spectroscopy: Si(111)-(7 x 7) Phys.Rev.B 50, (Rapid Comm.) 18 686(1994).
- D.A.Evans und K. Horn Quantisation of valence states observed in small Ag islands on the GaAs(110) surface Surface Sci.307-309, 321(1994).
- Th. Chassé, J. Paggel , G. Neuhold , W. Theis, und K. Horn Photoemission study of the Cs/GaP(110) interface at low temperatures Surface Science 307-309, 295(1994).
- U.Rossow, T.Werninghaus, D.R.T.Zahn, W.Richter, und K.Horn Thin Epitaxial Films of Wide Gap II-VI compounds studied by Spectroscopic Ellipsometry Thin Solid Films 233, 176(1993).
- I.Jimenez, F.J.Palomares, J.Avila, M.T.Cuberes, F.Soria, J.L.Sacedon, und K.Horn Thermal effects on the growth of SiO2 on GaAs(100) by reduction of native oxides J.Vac.Sci.Technol. A 11, 1028(1993).
- W.Theis und K.Horn Temperature-dependent Line Broadening in Core Level Photoemission Spectra FromAluminium Phys. Rev. B 47, (Rapid Commun.) 16060 (1993).
- D.A.Evans, G.J.Lapeyre, und K.Horn Overlayer-induced Valence States, and Evidence for Charge Transfer in Na/GaP(110) and Na/GaAs(110): a Comparative Study J.Vac.Sci.Technol. B 11, 1492(1993).
- J.J.Paggel, H.Haak, und K.Horn Na adsorption on Si(111) -7 x 7 studied by Scanning Tunneling Microscopy and Photoemission J.Vac.Sci.Technol.B 11, 1439(1993).
- R.Hofmann, W.A.Henle, H.Öfner, M.G.Ramsey, F.P.Netzer, W.Braun, und K.Horn Physical and Chemical Effects at Rare-Metal-SiO2-Si Structures Physical Review B 47, 10407(1993).
- D.A.Evans und K.Horn Ag/GaAs(110) revisited J.Elec.Spec.Relat.Phenom. 62, 59(1993).
- D.A.Evans,M.Alonso, R.Cimino, und K.Horn Observation of Quantum Size Effects in Photoemission From Ag Islands on GaAs(110) Phys.Rev.Letters 70, 3483(1993).
- M.von der Emde, D.R.T.Zahn, D.A.Evans und K.Horn Electrical in situ Characterisation of Metal/Gallium Phosphide(110) Schottky Contacts Proceedings of IVC-12, Appl.Surf.Sci. 70/71, 507(1993).
- Ph.Hofmann, K.Horn, A.M.Bradshaw, D.Fuchs, M.Cardona, und R.L.Johnson The Dielectric Function of Cubic and Hexagonal CdS in the Vacuum UV Region Phys.Rev. B 47, 1639 (1993).
- D.A.Evans, G.J.Lapeyre, und K.Horn Photoemission observation of Na-induced states in the band gap and evidence for charge transfer in Na/GaP(110) Phys.Rev. B 48, 1939(1993).
- Th.Chassé, M.Alonso, R.Cimino, W.Theis, W.Braun, und K.Horn Growth Mode and Temperature dependent Morphology of Indium on GaP(110) Appl.Surf.Sci., 64, 329(1993).
- Ch.Maierhofer, D.R.T.Zahn, D.A.Evans, und K.Horn Suppression of Interface reaction and Modification of Band Offset by Sb interlayers in CdS/InP(110) Heterojunctions J.Appl..Phys. 73, 4089(1993).
- D.A.Evans, K.Horn, M.von der Emde, C.Schultz, W.Richter und D.R.T.Zahn Schottky barrier height for Na on GaP(110) J.Appl. Phys. 72,4486(1992).
- K.Horn Photoemission studies of Semiconductor Interfaces: Electronic Structure and Barrier Heights Surface Science 269/270, 938(1992).
- D.A.Evans, T.P.Chen, Th.Chassé, K.Horn, M. von der Emde, und D.R.T.Zahn Investigation of Schottky barrier formation for transition metal overlayers on InP and GaP(110) surfaces Surface Science 269/270, 979(1992).
- A.Klein, C.Pettenkofer, W.Jaegermann, Th.Chassé, K.Horn, M.Ch.Lux-Steiner und E.Bucher Interface Reaction of Pt on p-WSe2(0001) surfaces Surf.Sci.Lett. 264, L193(1992).
- K.Horn, M.Alonso, und R.Cimino Surface Photovoltage Effects in the Determination of Band Bending and Schottky Barrier Heights by Photoemission Appl.Surf.Sci. 56-58, 271(1992).
- R.Cimino, A.Gearante, M.Alonso, und K.Horn Photoemission Study of Non-Equilibrium Effects in Metals on GaAs(110) Appl.Surf.Sci. 56-58, 151(1992).
- D.R.T.Zahn, Ch.Maierhofer, A.Winter, M.Reckzügel, R.Srama, U.Rossow, A.Thomas, K.Horn, und W.Richter In-situ Monitoring of Heterostructure Growth by Optical Spectroscopies: CdS on InP(110) Appl.Surf.Sci. 56-58, 684(1992).
- D.A.Evans, T.P.Chen, Th.Chassé, und K.Horn The interaction of Pt with GaP(110): interface reaction, band bending and surface photovoltage effects Appl.Surf.Sci. 56-58, 233-241(1992).
- Ch.Maierhofer, D.R.T.Zahn, D.A.Evans, und K.Horn Influence of thin metallic interlayers on the valence band offset in CdS/InP(110) Appl.Surf.Sci., 56-58, 738 (1992).
- D.R.T.Zahn,Ch.Maierhofer, A.Winter, M.Reckzügel, R.Srama, A.Thomas, K.Horn, W.Richter The Growth of Cubic CdS on InP(110) Studied In Situ by Raman Spectroscopy J.Vac.Sci.Technol. B 9, 2206 (1991).
- Ch.Maierhofer, S.Kulkarni, M.Alonso, T.Reich, und K.Horn Valence Band Offset in ZnS layers on Si(111) grown by Molecular Beam Epitaxy J.Vac.Sci.Technol. B 9, 2238 (1991).
- W.A.Henle, M.G.Ramsey, F.P.Netzer, und K.Horn Reversible Eu2+ - Eu3+ transitions at the Eu-Si Interface Appl.Phys.Lett. 58, 1605(1991).
- H.Meyer, R.Schulz, H.Suhr C.Haag K.Horn und A.M.Bradshaw Metallization Of Polytetrafluoroethylene (PTFE) By Means of Plasma-Enhanced Chemical Vapour Deposition in: "Metallized Plastics: Fundamental and Applied Aspects I",ed. K.L.Mittal, Plenum Press New York-London 1992, p. 121 - 130..
- K.Horn, A.Ortega, K.Doblhofer, A.M.Bradshaw, R.Schulz und H.Meyer Surface Pre-treatment and Metal Coating of Commercial Polyimide Studied by Surface Analytical Techniques in: "Metallized Plastics: Fundamental and Applied Aspects I", ed. K.L.Mittal, Plenum Press New York-London 1992, p. 283-292.
- M.Alonso, R.Cimino, und K.Horn Surface Photovoltage effects in photoemission from metal-GaP(110) interfaces: temperature-dependent Fermi level movement J.Vac.Sci.Technol, A 9, 891(1991 ).
- Th.Chassé, W.Theis, T.P.Chen, D.A.Evans, K.Horn, C.Pettenkofer, und W.Jägermann Interface Chemistry and band bending induced by Pt deposition onto GaP(110) Surface Science 251/252, 472(1991).
- P.J.W.Weijs, P.A.M. van der Heide, H.Haak, K.Horn, J.F. van Acker, und J.C.Fuggle The Ba/Si(100) interface: XPS, BIS, Synchrotron PS and LEED studies of Schottky barrier formation Surface Science 260, 102(1992).
- R.H.J.Kappert, H.R.Borsje, J.F. van Acker, K.Horn, H.Haak, K.H.J.Buschow, und J.C.Fuggle Photoemission study of the upper limit to the change of the local exchange splitting at finite temperature Phys.Rev. B 43, 3259(1991).
- J.F.van Acker, P.W.J.Weijs, J.C.Fuggle, K.Horn, H.Haak, und K.H.J.Buschow Photoemission investigation of the electronic structure of Fe-Pd and Fe-Pt alloys Phys.Rev. B 43, 8903(1991).
- K.Horn Semiconductor interface studies with core and valence level photoemission Applied Physics A 51, 289(1990).
- M.Alonso, R.Cimino. Ch.Maierhofer, Th.Chassé, W.Braun, und K.Horn Schottky barrier heights and interface chemistry in Ag, In, and Al overlayers on GaP(110) J.Vac.Sci.Technol. B 8, 955 (1990).
- W.G.Wilke, Ch.Maierhofer, und K.Horn Test of band offset commutativity by photoemission from an in situ grown ZnTe/CdS/ZnTe quantum well J.Vac.Sci.Technol. B 8,760 (1990).
- M.Alonso, R.Cimino, und K.Horn Surface photovoltage effects in photoemission from metal/GaP(110) interfaces Phys.Rev.Letters 64, 1947(1990).
- I.M.Curelaru, K.-S.Din, G.-E.Jang, L.-G.Chen, E.Wall, S.Susman, T.O.Brun, K.J.Volin, E.E.Koch, und K.Horn Electronic structure, Bonding and Lithium Migration effects involving the surface of the Mixed Conductor β-LiAl , in: "Science and Technology of Fast Ion Conductors", ed. Harry L.Tuller and Minko Balkanski, Plenum Press New York 1989, p.33.
- W.G.Wilke, R.Seedorf, K.Horn Valence band offset and interface chemistry of II-VI epitaxial layers grown on the (110) surface of III-V materials J.Crystal Growth 101, 620 (1990).
- M.Alonso, R.Cimino, Th.Chassé, K.Horn, W.Braun Temperature-dependent interface formation study of aluminium on GaP(110) Vacuum 43, 1025 (1990).
- Th.Chassé, M.Alonso, R.Cimino, K.Horn, W.Braun Indium interaction with GaP(110): example of an unreacted interface Vacuum 43,835 (1990).
198980
- K.Horn, J.Somers, Th.Lindner, A.M.Bradshaw Electronic structure of adsorbed alkali layers on Al(111) determined by valence level photoemission in "Alkali Adsorption on Metals and Semiconductors", eds. H.P.Bonzel, A.M.Bradshaw, and G.Ertl, Elsevier (Amsterdam) 1989.
- W.G.Wilke, V.Hinkel, W.Theis, K.Horn Surface shifts in core level photoemission from InP(110): experiments and model calculations Phys.Rev. B 40, 9824 (1989).
- K.Horn, A.Hohlfeld, J.Somers, Th.Lindner, P.Hollins und A.M.Bradshaw Reply to: Comment on "Identification of the s-derived valence-electron level in photoemission from alkali metal adlayers on aluminium" by H.Ishida Phys.Rev.Letters 63,1535(1988).
- W.G.Wilke, R.Seedorf, K.Horn Valence band offset and interface chemistry of CdS/InP(110) J.Vac.Sci.Technol. B 7, 807(1989).
* Th.Chasse, W.G.Wilke, K.Horn Chemical reactions and temperature-dependent interface formation of Ti/InP(110) Surface and Interface Analysis 14,315(1989).
- K.Horn, A.M.Bradshaw, K.Doblhofer, S.Krause, G.Weinberg, H.-M.Seidenspinner und R.Schulz A study of copper-coated polyimide by scanning electron microscopy, core level photoemission, EDX, and infrared reflection absorption spectroscopy Fresenius Zeitschrift für Analytische Chemie (1989) 333,590.
- J.F.van Acker, P.W.J.Weijs, J.C.Fuggle, K.Horn, W.G.Wilke, H.Haak, H.Saalfeld, H.Kuhlenbeck, W.Braun, G.P.Williams, D.Wesner, M.Strongin, S.Krummacher, K.H.J.Buschow The electronic structure of Fe, Co, and Ni impurities in Pd Phys.Rev.B 38,10463(1988)..
- A.Hohlfeld und K.Horn LEED, ΔΦ and electron energy loss studies of adsorbed alkali layers on Al(111) Surface Science 211, 844 (1989).
- K.Horn, A.Hohlfeld, J.Somers, Th.Lindner, P.Hollins und A.M.Bradshaw Identification of the s-derived valence-electron level in photoemission from alkali metal adlayers on aluminium Phys.Rev.Letters 61,2488(1988).
- V.Hinkel, H.Haak, C.Mariani, L.Sorba, K.Horn und N.E.Christensen Band structure determination of PbSe and PbTe by angle-resolved photoemission Physical Review B 40, 5549 (1989).
- W.G.Wilke und K.Horn Valence band offset and interface formation in ZnTe/GaSb(110) studied by photoemission using synchrotron radiation J.Vac.Sci.Technol. B 6,1211(1988).
- D.Heskett, K.-H.Frank, K.Horn, E.E.Koch, H.-J.Freund, A.Baddorf, K.-D.Tsuei, und E.W.Plummer Correlation between electron loss and inverse photoemission measurements of alkali metals on metal surfaces Phys. Rev.(Rapid Comm.) B 37,10387(1988).
- I.M.Curelaru, K.-S.Din, G.-E.Jang, L.-G.Chen, E.Wall, S.Susman, T.O.Brun, K.J.Volin, E.E.Koch, K.Horn, J.Ghijsen und R.L.Johnson Experimental studies of the electronic structure of I-II and I-III intermetallic compounds with B32 (Zintl) structure J.Vac.Sci.Technol. A 5,2038(1987).
- K.C.Prince, K.Dückers, K.Horn und V.Chab Orientation of molecular oxygen on Pt(110) Surface Science 200,L451 (1988).
- A.B.McLean,I.T.McGovern,C.Stephens, K.Horn, W.G.Wilke, H.Haak und W.Braun The dependence of core level photoemission spectra on interface growth mode: Al on InP(110) Phys.Rev.(Rapid Comm.)B 38,6330(1988).
- V.Hinkel, L.Sorba, H.Haak, K.Horn, und W.Braun Reply to: Comment on "evidence for Si diffusion through epitaxial NiSi2 grown on Si(111)" Appl.Phys.Lett. 52, 2269(1988).
- C.Stephens, G.J.Hughes, I.T.McGovern, A.B.McLean, D.R.T.Zahn, R.H.Williams, W.Braun, R.Cimino, W.Wilke, H.Haak und K.Horn Thermal effects in Aluminium-Semiconductor Interface Formation Vacuum 38,329(1988).
- K.Bange, G.Weinberg, S.Krause und K.Horn Characterization of layers produced by a reactive deposition technique: an EDAX and ESCA study Fresenius Zeitschrift für Analytische Chemie 329,400 (1987).
- K.Dückers, K.C.Prince, H.P.Bonzel, V.Chab und K.Horn Adsorption induced surface core level shifts of Pt(110) Phys.Rev. B 36,6292(1987).
- J.W.M.Frenken, R.L.Krans, J.F. van der Veen, E.Holub-Krappe und K.Horn Missing row reconstruction of Ag(110) induced by potassium reconstruction Phys.Rev.Letters 59,2307(1987).
- L.Sorba, V.Hinkel und K.Horn Surface core level shifts of clean and hydrogen-covered InSb(110) surfaces Surface Science 194,597(1988).
- B.Kessler, A.Eyers, K.Horn, N.Müller, B.Schmiedeskamp, G.Schönhense und U.Heinzmann Determination of Xenon valence and conduction bands using spin-polarised photoemission Phys.Rev.Letters 59,331(1987).
- E.Holub-Krappe, K.Horn, J.M.W.Frenken, R.L.Krans, und J.F. van der Veen Multilayer relaxation at the Ag(110) surface Surface Science 188,335(1987).
- K.H.Frank, K.Horn, J.Wilder und E.E.Koch Unoccupied electronic levels and conduction band structure of Xenon probed by Inverse Photoemission Applied Physics A 44,97(1987).
- L.Sorba, V.Hinkel, H.U.Middelmann, und K.Horn Bulk and surface band structure of InP determined by photoemission from InP(110) Phys.Rev. B 36,8075(1987).
- V.Hinkel,L.Sorba, H.Haak, K.Horn und W.Braun Evidence for Si diffusion through epitaxial NiSi2 grown on Si(111) Appl.Phys.Lett.50,1257(1987).
- A.Hohlfeld, M.Sunjic und K.Horn The electronic structure of Cs adsorbed on Al(111) J.Vac.Sci.Technol. A 5,679(1987).
- K.Horn, S.Krause, G.Weinberg und K.Bange Study of protective coatings containing Zirconium using electron spectroscopy for chemical analysis Thin Solid Films 150,41(1987).
- H.U.Middelmann, L.Sorba, V.Hinkel und K.Horn Determination of bulk and surface band structure of a-Sn by angle-resolved photoemission Phys. Rev. B 35,718(1987).
- L.Sorba, H.-U.Middelmann, V.Hinkel, und K.Horn Photoemission studies of band structure and core levels of clean and adsorbate-covered surfaces Vuoto 16, 43 (1986).
- N.Spielberg,Z.Luz,R.Poupko,K.Praefcke,B.Kohne,J.Prichard, und K.Horn The crystal and mesophase structure of hexakis-(alkylsulfono)-benzene homologues by x-ray diffractometry Z.Naturforschung 41a, 855 (1986).
- K.Horn, K.H.Frank, J.A.Wilder, und B.Reihl Observation of final state screening in Inverse Photoemission from adsorbed Xe layers Phys.Rev.Letters 57,1064(1986).
- E.Holub-Krappe, K.C.Prince, K.Horn, und D.P.Woodruff X-ray photoelectron diffraction determination of the molecular orientation of CO and Methoxy adsorbed on Cu(110) Surface Science 173, 176 (1986).
- H.U.Middelmann, L.Sorba, und K.Horn Valence band structure determination of InSb by angle-resolved photoemission Phys.Rev. B 34, 957 (1986).
- T.Mandel, M.Domke, G.Kaindl, C.Laubschat, M.Prietsch, H.-U.-Middelmann, und K.Horn Core level binding energies and Auger electron energies in epitaxial rare gas layers on graphite(001) Surface Science 162, 453 (1985).
- K.C.Prince, E.Holub-Krappe, K.Horn und D.P.Woodruff Precise molecular orientation for adsorbates using x-ray photoelectron diffraction: Methoxy (CH3O) and CO on Cu(110) Phys.Rev.(Rapid Comm.) B 32, 4249 (1985).
- K.C.Prince, E.Holub-Krappe, G.Paolucci, K.Horn und D.P.Woodruff Determination of adsorbate orientation by x-ray photoelectron diffraction Proceedings of the X84 Conference on X-ray Absorption And Inner Shell Processes, ed. A.Meisel and J.Finster Leipzig 1984, p. 479.
- S.Krause, C.Mariani, K.C.Prince und K.Horn Screening effects in photoemission from weakly bound adsorbates: CO on Ag(110) Surface Science 138, 305 (1984).
- K.Horn, B.Reihl, A.Zartner, D.E.Eastman, K.Hermann und J.Noffke Electronic energy bands of lead: angle-resolved photoemission and band structure calculations Phys.Rev. B 30, 1711 (1984).
- D.P.Woodruff und K.Horn The surface structure of a-Sn(100) Phil. Mag. A 47,L5 (1983).
- K.C.Prince, G.Paolucci, A.M.Bradshaw, K.Horn und C.Mariani Oxygen adsorption on Ag(110): observation of a precursor state Vacuum 33, 867 (1983).
- W.Griebenow, B.Werthmann, D.Treu, K.Horn und S.Krause Zur Identifizierung von Tinten auf alten Handschriften Maltechnik Restauro 3, 208 (1983).
- D.P.Woodruff und K.Horn The surface structure of a-Sn(100) and the effect of hydrogen adsorption Vacuum 33, 633(1983).
- T.Mandel, G.Kaindl, K.Horn, M.Iwan, H.-U.Middelmann und C.Mariani Layer-dependent shifts in ionisation potential and Auger energies for Kr/Cu(110) Solid State Commun. 46, 713 (1983).
- C.Mariani und K.Horn Orientation of water adsorbed on Cu(110) Surface Science 126, 279(1983).
- S.Krause, K.Horn, W.Griebenow und F.Werthmann Bestimmung der Tintenart in alten Handschriften mittels ESCA MPG-Spiegel, Aktuelle Informationen Ausgabe 6/1982 S. 22.
- C.Mariani, H.-U.Middelmann, M.Iwan und K.Horn On the origin of satellite peaks in valence photoemission from CO on Cu(110) Chem.Phys.Lett. 93,308 (1982).
- J.W.Gadzuk, S.Holloway, C.Mariani und K.Horn Temperature-dependent photoemission line shapes of physisorbed xenon Phys.Rev.Letters 48,1288(1982).
- C.Mariani, K.Horn und A.M.Bradshaw Photoemission studies of the commensurate-incommensurate transition in the system Xe/Cu(110) Phys.Rev. B 25,779(1982).
- K.Horn, J.DiNardo, W.Eberhardt, H.-J.Freund und E.W.Plummer The adsorption of N2: chemisorbed on Ni(110) and physisorbed on Pd(111) Surface Science 118, 465(1982).
- K.Horn, C.Mariani und L.Cramer Krypton and Argon on Cu(110): Geometric and electronic structure Surface Science 117, 376 (1982).
- P.Hofmann, K.Horn und A.M.Bradshaw Orientation of adsorbed benzene from angle-resolved photoemission measurements Surface Science 105, L620 (1981).
- W.Eberhardt, E.W.Plummer, K.Horn und J.Erskine Magnetic exchange splitting of electronic surface state on Ni(110) Phys.Rev.Letters 45, 273(1980).
- A.Ortega, F.M.Hoffmann, W.Stenzel, A.Garbout, R.Unwin und K.Horn An IR and EELS study of adsorption of CO on Pd(100) Le Vide, Les couches minces Suppl. 201, 335(1980).
- P.Hofmann, C.Mariani, K.Horn und A.M.Bradshaw The characterisation of intermediates in surface reactions: the methoxy and formate species on Cu(100) Le Vide, Les couches minces Suppl. 201, 541(1980).
- K.Horn Schwingungsspektroskopie von Adsorbaten auf Metall-Einkristall-Oberflächen Nova Acta Leopoldina 1980.
- R.Unwin, K.Horn und P.Geng Photoemission from rare gas monolayers on Pd(100) Vakuum-Technik 29,149(1980).
- K.Hermann, J.Noffke und K.Horn Lateral interactions in rare gas monolayers: Band structure models and photoemission experiments Phys.Rev. B 22, 1022 (1980).
197973
- K.Horn, N.V.Richardson, A.M.Bradshaw und J.K.Sass Adsorbate-induced resonances observed in photoemission from a c(2 x 2) sulphur overlayer on Pd(100) Solid State Comm. 32, 161 (1979).
- I.P.Batra, K.Hermann, A.M.Bradshaw und K.Horn Theoretical and experimental studies of band formation on CO adlayers Phys.Rev. B 20, 801(1979).
- P.Hofmann, C.v.Muschwitz, K.Horn, K.Jacobi, A.M.Bradshaw, und M.Scheffler Angular-resolved photoemission from an ordered oxygen overlayer on Al(111) Surface Science 89, 327(1979).
- K.Horn ,A.M.Bradshaw, K.Hermann und I.P.Batra Adsorbate band formation: the chemisorption of CO on Pd(100) Solid State Commun. 31,257(1979).
- K.Horn und A.M.Bradshaw Photoemission from single crystal xenon Solid State Commun. 30,545(1979).
- P.Hofmann, K.Horn, A.M.Bradshaw und K.Jacobi The adsorption and condensation of oxygen on Aluminium at low temperature Surface Science 82,L610 (1979).
- M.Scheffler, K.Horn, A.M.Bradshaw und K.Kambe Angular-resolved photoemission from physisorbed xenon Surface Science 80,69(1979).
- K.Horn IR reflection-absorption spectroscopy of mono- and multilayers of ethane on Pt(111) Proceedings of the Int1ernational Conference "Vibrations in adsorbed layers" KFA Jülich June 1978, p. 140.
- K.Horn, M.Scheffler und A.M.Bradshaw Photoemission from physisorbed Xenon: evidence for lateral interactions Phys.Rev.Lett. 41,822(1978).
- K.Horn, A.M.Bradshaw und K.Jacobi Angular-resolved UPS studies of the chemisorption of ethylene and acetylene on Ni(100) J.Vac.Sci.Technol.15, 575(1978).
- K.Horn, A.M.Bradshaw und K.Jacobi Angular resolved UV photoemission from ordered layers of CO on a Ni(100) surface Surface Science 72, 719(1978).
- J.K.Sass, H.J.Lewerenz, E.Piltz und K.Horn Photoemission yield study with polarised light at normal incidence: crystal symmetry effects below the direct transition threshold J.Phys. C 11, L 51 (1978).
- K.Horn und J.Pritchard IR spectra of ordered and disordered overlayers on metals: CO on a Pt(111) single crystal surface J.Physique 38, C4-164(1977).
- K.Horn, M.Hussain und J.Pritchard The adsorption of CO on Cu(110) Surface Science 63, 244(1977).
- K.Horn und J.Pritchard IR spectrum of CO chemisorbed on Cu(100) Surface Science 55, 701(1976).
- K.Horn und J.Pritchard Wavelength-modulated IR absorption spectroscopy: ethane adsorbed on Cu(110) Surface Science 52, 437(1975).
- H.Ibach, K.Horn, R.Dorn und H.Lüth The adsorption of oxygen on silicon (111) surfaces Surface Science 38,433(1973).
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